jiangsu changjiang electronics technology co., ltd to-252 -2l plastic-encapsulate transistors 2SA1225 transistor (pnp) features z high t ransition f requency z complementary to 2sc2983 applications z power a mplifier a pplications z driver s tage a mplifier a pplications maximum ratings (t a =25 unless otherwise noted) electrical chara cteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma ,i e =0 -160 v collector-emitter breakdown voltage v (br) ceo * i c =-10ma, i b =0 -160 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =160v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-5v, i c =-0.1a 70 240 collector-emitter saturation voltage v ce(sat) i c =-0.5a,i b =-50ma -1.5 v base-emitter voltage v be v ce =-5v, i c =-0.5a -1 v transition frequency f t v ce =-10v ,i c =-100ma 100 mhz collector output capacitance c ob v cb =-10v ,i e =0,f=1mhz 30 pf * pulse test classification of h fe rank o y range 70-140 120-240 symbol parameter value unit v cbo collector-base voltage -160 v v ceo collector-emitter voltage -160 v v ebo emitter-base voltage -5 v i c collector current -1.5 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55~150 to-252 -2l 1. base 2. collector 3 .emitter www.cj-elec.com 1 d , mar ,201 6
-85 -90 -95 -100 -105 -110 10 100 -0.1 -1 -10 -100 -1000 -200 -400 -600 -800 -1000 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 -0.1 -1 -10 -100 -1000 -10 -100 -1 -10 -100 -1000 10 100 1000 -0.1 -1 -10 10 100 1000 -200 -400 -600 -800 -1000 -0.1 -1 -10 -100 -1000 -0 -1 -2 -3 -4 -5 -6 -7 -0 -30 -60 -90 -120 -150 300 -1500 i c f t ?? common emitter v ce =-10v t a =25 collector current i c (ma) transition frequency f t (mhz) -1500 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) -1500 -1500 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) -500 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = -5v -30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =-5v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) -1ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.2ma -0.3ma -0.4ma i b =-0.1ma www.cj-elec.com 2 d , mar ,201 6 typical characteristics
min . ma x . min . ma x . a 2. 200 2.380 0.087 0.094 a1 0.000 0.100 0.000 0.004 b 0.800 1.400 0.031 0.055 b 0.710 0.810 0.028 0.032 c 0.460 0.560 0.018 0.022 c1 0.460 0.560 0.018 0.022 d 6.500 6.700 0.256 0.264 d1 5.130 5.460 0.202 0.215 e 6.000 6.200 0.236 0.244 e e1 4.327 4.727 0.170 0.186 m n l 9.800 10.400 0.386 0.409 l1 l2 1.400 1.700 0.055 0.067 v - 0.190 ref. 1.778ref. 0.762ref. 0.070ref. 0.018ref. 4.830 ref. 2.9ref. 0.114ref. symbol dimensions in millimeters dimensions in inches 2.286 typ. 0.090 typ. www.cj-elec.com ' , 0 d u ,201
to-252(4r)-2l tape and reel www.cj-elec.com ' , 0 d u ,201
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